2SD1760 3a , 60v npn epitaxial planar silicon transistor elektronische bauelemente 28-mar-2011 rev. a page 1 of 3 http://www.secosgmbh.com/ any changes of specification will not be informed individually. ? ? base ? ? emitte r collector ? ? rohs compliant product a suffix of ?-c? specifies halogen & lead-free features ? low v ce(sat) . v ce(sat) = 0.5v(typ.) (i c /i b = 2a / 0.2a) ? complements the 2sb1184 classification of h fe product-rank 2SD1760-p 2SD1760-q 2SD1760-r range 82~180 120~270 180~390 package information package mpq leader size to-252 2.5k 13? inch absolute maximum ratings (t a = 25 c unless otherwise specified) parameter symbol ratings unit collector to base voltage v cbo 60 v collector to emitter voltage v ceo 50 v emitter to base voltage v ebo 5 v collector current -continuous i c 3 a collector power dissipation p c 1.5 w junction temperature t j 150 storage temperature t stg -55 ~ 150 electrical characteristics (t a = 25c unless otherwise noted) parameter symbol min. typ. max. unit test conditions collector-base breakdown voltage v (br)cbo 60 - - v i c =50 a, i e =0 collector-emitter breakdown voltage v (br)ceo 50 - - v i c =1ma, i b =0 emitter-base breakdown voltage v (br)ebo 5 - - v i e =50 a, i c =0 collector cut-off current i cbo - - 1 a v cb =40v, i e =0 emitter cut-off current i ebo - - 1 a v eb =4v, i c =0 dc current gain h fe 82 - 390 v ce =3v, i c =500ma collector-emitter sa turation voltage v ce(sat) - - 1 v i c =2a, i b =200ma transition frequency f t - 90 - mhz v ce =5v, i c =500ma, f=30mhz collector output capacitance c ob - 40 - pf v cb =10v, i e =0, f=1mhz a c d n o p g e f h k j m b d-pack (to-252) ref. millimete r ref. millimete r min. max. min. max. a 6.4 6.8 j 2.30 ref. b 5.20 5.50 k 0.70 0.90 c 2.20 2.40 m 0.50 1.1 d 0.45 0.58 n 0.9 1.6 e 6.8 7.3 o 0 0.15 f 2.40 3.0 p 0.43 0.58 g 5.40 6.2 h 0.8 1.20
2SD1760 3a , 60v npn epitaxial planar silicon transistor elektronische bauelemente 28-mar-2011 rev. a page 2 of 3 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristic curves
2SD1760 3a , 60v npn epitaxial planar silicon transistor elektronische bauelemente 28-mar-2011 rev. a page 3 of 3 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristic curves
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